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Microwave dielectric copper-clad substrate TP-1/2 - y

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Microwave dielectric copper-clad substrate TP-1/2

Microwave Circuit Design Advantages Using TP-1/2

Stable Dielectric Constant and Operating Temperature

The dielectric constant of TP-1/2 is stable and can be customized within the range of 3.0 a 22.0, depending on the specific requirements of the circuit design. The operating temperature ranges from -100 degrees Celsius to +150 degrees Celsius.

Reliable Peel Strength and Lower Manufacturing Costs

TP-1/2 offers a more reliable peel strength between copper and the substrate compared to vacuum film coating on ceramic substrates. This makes it easier for customers to process circuits with higher pass rates and significantly lower manufacturing costs than ceramic substrates.

Low Dissipation Factor and Mechanical Manufacturability

TP-1/2 has a dissipation factor (tgδ) of ≤1*10^-3, with minimal variation as frequency increases. It is also easily machinable through processes such as drilling, puñetazos, grinding, corte, and etching, which are not possible with ceramic substrates.

Technical Specifications of TP-1/2

Apariencia

Smooth and neat on both sides: no stains, scratches, or dents.

Dimension and Tolerance

  • Dimensiones (A*B in mm): 120100, 150150, 160160, 180180, 200200, 170240
  • Tolerancia: -2
  • Espesor y tolerancia: 0.8±0,05, 1.0±0,05, 1.2±0,05, 1.5±0.06, 2.0±0,075, 3.0±0,10, 4.0±0,10, 5.0±0.12, 6.0±0.12, 10.0±0.2
  • Customized Lamination: Available for special dimensions.

Resistencia mecánica

  • Fuerza de pelado:
    • estado normal: ≥6N/cm
    • In alternating humidity and temperature: ≥4 N/cm

Propiedad química

The chemical etching method used for PCB can be applied without altering the dielectric properties of the materials.

Propiedad eléctrica

Nombre Condición de prueba Unidad Valor
Densidad estado normal gramos/cm³ 1.0~2.9
Absorción de humedad Dip in distilled water at 20±2°C for 24 horas % ≤0.02
Temperatura de funcionamiento Cámara de alta y baja temperatura °C -100~+150
Conductividad térmica -55~288°C W/m/k 0.6
CTE Temperature rise of 96°C per hour ppm/°C ≤6*10^-5
Factor de contracción 2 horas en agua hirviendo % 0.0004
Resistividad superficial 500V DC, normal state ≥1*10^7
Resistividad de volumen estado normal MΩ·cm ≥1*10^9
Pin Resistance 500V DC, normal state ≥1*10^6
Rigidez dieléctrica superficial estado normal kv/mm ≥1.5
Constante dieléctrica 10GHZ εr 3,6,9.6,10.2,10.5,11,16,20,22(±2%) (customizable)
Factor de disipación 10GHZ Tgδ(εr 3-11) ≤1*10^-3
Factor de disipación Tgδ(εr 12-22) ≤1,5*10^-3

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