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Microwave dielectric copper-clad substrate TP-1/2 - E

Elenco dei materiali PCB

Microwave dielectric copper-clad substrate TP-1/2

Microwave Circuit Design Advantages Using TP-1/2

Stable Dielectric Constant and Operating Temperature

The dielectric constant of TP-1/2 is stable and can be customized within the range of 3.0 A 22.0, depending on the specific requirements of the circuit design. The operating temperature ranges from -100 degrees Celsius to +150 degrees Celsius.

Reliable Peel Strength and Lower Manufacturing Costs

TP-1/2 offers a more reliable peel strength between copper and the substrate compared to vacuum film coating on ceramic substrates. This makes it easier for customers to process circuits with higher pass rates and significantly lower manufacturing costs than ceramic substrates.

Low Dissipation Factor and Mechanical Manufacturability

TP-1/2 has a dissipation factor (tgδ) of ≤1*10^-3, with minimal variation as frequency increases. It is also easily machinable through processes such as drilling, punching, grinding, cutting, and etching, which are not possible with ceramic substrates.

Technical Specifications of TP-1/2

Appearance

Smooth and neat on both sides: no stains, scratches, or dents.

Dimension and Tolerance

  • Dimensions (A*B in mm): 120100, 150150, 160160, 180180, 200200, 170240
  • Tolerance: -2
  • Thickness and Tolerance: 0.8±0.05, 1.0±0.05, 1.2±0.05, 1.5±0.06, 2.0±0.075, 3.0±0.10, 4.0±0.10, 5.0±0.12, 6.0±0.12, 10.0±0.2
  • Customized Lamination: Available for special dimensions.

Mechanical Strength

  • Forza della pelatura:
    • Normal state: ≥6N/cm
    • In alternating humidity and temperature: ≥4 N/cm

Chemical Property

The chemical etching method used for PCB can be applied without altering the dielectric properties of the materials.

Electrical Property

Nome Condizione di prova Unità Value
Density Normal state g/cm³ 1.0~2.9
Moisture Absorption Dip in distilled water at 20±2°C for 24 ore % ≤0.02
Operating Temperature High-low temperature chamber °C -100~+150
Thermal Conductivity -55~288°C W/m/k 0.6
CTE Temperature rise of 96°C per hour ppm/°C ≤6*10^-5
Shrinkage Factor 2 hours in boiling water % 0.0004
Surface Resistivity 500V DC, normal state ≥1*10^7
Volume Resistivity Normal state MΩ·cm ≥1*10^9
Pin Resistance 500V DC, normal state ≥1*10^6
Surface Dielectric Strength Normal state Kv/mm ≥1.5
Costante dielettrica 10GHZ εr 3,6,9.6,10.2,10.5,11,16,20,22(±2%) (customizable)
Fattore di dissipazione 10GHZ Tgδ(εr 3-11) ≤1*10^-3
Fattore di dissipazione Tgδ(εr 12-22) ≤1.5*10^-3

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