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Microwave Circuit Design Advantages Using TP-1/2
Stable Dielectric Constant and Operating Temperature
The dielectric constant of TP-1/2 is stable and can be customized within the range of 3.0 A 22.0, depending on the specific requirements of the circuit design. The operating temperature ranges from -100 degrees Celsius to +150 gradi Celsius.
Reliable Peel Strength and Lower Manufacturing Costs
TP-1/2 offers a more reliable peel strength between copper and the substrate compared to vacuum film coating on ceramic substrates. This makes it easier for customers to process circuits with higher pass rates and significantly lower manufacturing costs than ceramic substrates.
Low Dissipation Factor and Mechanical Manufacturability
TP-1/2 has a dissipation factor (Tgside) of ≤1*10^-3, with minimal variation as frequency increases. It is also easily machinable through processes such as drilling, pugni, grinding, taglio, and etching, which are not possible with ceramic substrates.
Technical Specifications of TP-1/2
Aspetto
Smooth and neat on both sides: no stains, scratches, or dents.
Dimension and Tolerance
- Dimensions (A*B in mm): 120100, 150150, 160160, 180180, 200200, 170240
- Tolleranza: -2
- Spessore e tolleranza: 0.8± 0,05, 1.0± 0,05, 1.2± 0,05, 1.5±0.06, 2.0±0.075, 3.0±0.10, 4.0±0.10, 5.0±0.12, 6.0±0.12, 10.0±0.2
- Customized Lamination: Available for special dimensions.
Resistenza meccanica
- Forza della pelatura:
- Stato normale: ≥6N/cm
- In alternating humidity and temperature: ≥4 N/cm
Chemical Property
The chemical etching method used for PCB can be applied without altering the dielectric properties of the materials.
Electrical Property
| Nome | Condizione di prova | Unità | Valore |
|---|---|---|---|
| Densità | Stato normale | g/cm³ | 1.0～2.9 |
| Assorbimento di umidità | Dip in distilled water at 20±2°C for 24 ore | % | ≤0.02 |
| Temperatura operativa | Camera di temperatura ad alta bassa | ° C. | -100～+150 |
| Conducibilità termica | -55~288°C | W/m/k | 0.6 |
| Cte | Temperature rise of 96°C per hour | ppm/° C. | ≤6*10^-5 |
| Fattore di restringimento | 2 ore in acqua bollente | % | 0.0004 |
| Resistività superficiale | 500In DC, normal state | Mω | ≥1*10^7 |
| Resistività al volume | Stato normale | Mω · cm | ≥1*10^9 |
| Resistenza dei perni | 500In DC, normal state | Mω | ≥1*10^6 |
| Resistenza dielettrica superficiale | Stato normale | Kv/mm | ≥1.5 |
| Costante dielettrica | 10GHz | εr | 3,6,9.6,10.2,10.5,11,16,20,22(± 2%) (customizable) |
| Fattore di dissipazione | 10GHz | Tgδ(εr 3-11) | ≤1*10^-3 |
| Fattore di dissipazione | Tgδ(εr 12-22) | ≤1.5*10^-3 |
