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Microwave dielectric copper-clad substrate TP-1/2 - UGPCB

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Microwave dielectric copper-clad substrate TP-1/2

Microwave Circuit Design Advantages Using TP-1/2

Stable Dielectric Constant and Operating Temperature

The dielectric constant of TP-1/2 is stable and can be customized within the range of 3.0 에게 22.0, depending on the specific requirements of the circuit design. The operating temperature ranges from -100 degrees Celsius to +150 섭씨도.

Reliable Peel Strength and Lower Manufacturing Costs

TP-1/2 offers a more reliable peel strength between copper and the substrate compared to vacuum film coating on ceramic substrates. This makes it easier for customers to process circuits with higher pass rates and significantly lower manufacturing costs than ceramic substrates.

Low Dissipation Factor and Mechanical Manufacturability

TP-1/2 has a dissipation factor (tgside) of ≤1*10^-3, with minimal variation as frequency increases. It is also easily machinable through processes such as drilling, 펀칭, grinding, 절단, and etching, which are not possible with ceramic substrates.

Technical Specifications of TP-1/2

모습

Smooth and neat on both sides: no stains, scratches, or dents.

Dimension and Tolerance

  • 치수 (A*B in mm): 120100, 150150, 160160, 180180, 200200, 170240
  • 용인: -2
  • 두께 및 공차: 0.8±0.05, 1.0±0.05, 1.2±0.05, 1.5±0.06, 2.0±0.075, 3.0±0.10, 4.0±0.10, 5.0±0.12, 6.0±0.12, 10.0±0.2
  • Customized Lamination: Available for special dimensions.

기계적 강도

  • 껍질 힘:
    • 상태: ≥6N/cm
    • In alternating humidity and temperature: ≥4 N/cm

Chemical Property

The chemical etching method used for PCB can be applied without altering the dielectric properties of the materials.

Electrical Property

이름 테스트 조건 단위
Density 상태 g/cm³ 1.0~2.9
Moisture Absorption Dip in distilled water at 20±2°C for 24 시간 % ≤0.02
작동 온도 고상 온도 챔버 -100~+150
열전도율 -55~288°C w/m/k 0.6
CTE Temperature rise of 96°C per hour ppm/°C ≤6*10^-5
Shrinkage Factor 2 hours in boiling water % 0.0004
표면 저항 500DC에서, normal state ≥1*10^7
부피 저항성 상태 MΩ · cm ≥1*10^9
Pin Resistance 500DC에서, normal state ≥1*10^6
Surface Dielectric Strength 상태 Kv/mm ≥1.5
유전 상수 10GHZ εr 3,6,9.6,10.2,10.5,11,16,20,22(± 2%) (customizable)
소산 인자 10GHZ Tgδ(εr 3-11) ≤1*10^-3
소산 인자 Tgδ(εr 12-22) ≤1.5*10^-3

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