Microwave Circuit Design Advantages Using TP-1/2
Stable Dielectric Constant and Operating Temperature
The dielectric constant of TP-1/2 is stable and can be customized within the range of 3.0 к 22.0, depending on the specific requirements of the circuit design. The operating temperature ranges from -100 degrees Celsius to +150 degrees Celsius.
Reliable Peel Strength and Lower Manufacturing Costs
TP-1/2 offers a more reliable peel strength between copper and the substrate compared to vacuum film coating on ceramic substrates. This makes it easier for customers to process circuits with higher pass rates and significantly lower manufacturing costs than ceramic substrates.
Low Dissipation Factor and Mechanical Manufacturability
TP-1/2 has a dissipation factor (tgδ) of ≤1*10^-3, with minimal variation as frequency increases. It is also easily machinable through processes such as drilling, пробивание, grinding, резка, and etching, which are not possible with ceramic substrates.
Technical Specifications of TP-1/2
Появление
Smooth and neat on both sides: no stains, scratches, or dents.
Dimension and Tolerance
- Размеры (A*B in mm): 120100, 150150, 160160, 180180, 200200, 170240
- Толерантность: -2
- Толщина и толерантность: 0.8±0,05, 1.0±0,05, 1.2±0,05, 1.5±0.06, 2.0± 0,075, 3.0± 0,10, 4.0± 0,10, 5.0±0.12, 6.0±0.12, 10.0±0.2
- Customized Lamination: Available for special dimensions.
Механическая прочность
- Прочность на очистку:
- Нормальное состояние: ≥6N/cm
- In alternating humidity and temperature: ≥4 N/cm
Химическое свойство
The chemical etching method used for PCB can be applied without altering the dielectric properties of the materials.
Электрическое свойство
Имя | Условие испытания | Единица | Ценить |
---|---|---|---|
Плотность | Нормальное состояние | G/CM³ | 1.0~2.9 |
Влажно -поглощение | Dip in distilled water at 20±2°C for 24 часы | % | ≤0.02 |
Рабочая температура | Камера высокой температуры | °С | -100~+150 |
Теплопроводность | -55~288°C | W/m/k | 0.6 |
КТР | Temperature rise of 96°C per hour | ppm/° C. | ≤6*10^-5 |
Shrinkage Factor | 2 hours in boiling water | % | 0.0004 |
Поверхностное удельное сопротивление | 500В Вашингтоне, normal state | МОм | ≥1*10^7 |
Объемный удельное сопротивление | Нормальное состояние | МОм · см | ≥1*10^9 |
Pin Resistance | 500В Вашингтоне, normal state | МОм | ≥1*10^6 |
Surface Dielectric Strength | Нормальное состояние | Kv/mm | ≥1.5 |
Диэлектрическая проницаемость | 10ГХЗ | εr | 3,6,9.6,10.2,10.5,11,16,20,22(±2%) (customizable) |
Коэффициент рассеяния | 10ГХЗ | Tgδ(εr 3-11) | ≤1*10^-3 |
Коэффициент рассеяния | Tgδ(εr 12-22) | ≤1.5*10^-3 |